785nm 500mW 0.2nm Narrow Linewidth Raman Laser NIR Semiconductor Laser

785nm 500mW 0.2nm Narrow Linewidth Raman Laser NIR Semiconductor Laser

High Performance Laser. 785nm wavelength with 500mW of output power. The system is characterized by its compact structure, portability, and convenient use. It incorporates several core technologies such as the short cavity method, VBG wavelength locking, directional optical feedback, and built-in semiconductor refrigeration to achieve stable spectral output and power, as well as a narrow linewidth.

[Lead Time]
785nm 500mW Raman Laser: 3~4 weeks

[Features]
1. Spectral linewidth: <0.2nm
2. High power stability: <3%

[Application]
2. Raman spectroscopy
2. Sensing

[Specification]
Product Name: Narrow linewidth raman laser
Wavelength: 785nm
Output Power: 1~500mW (Adjustable)
Spectral Linewidth: <0.2nm
Beam Size: Near 1*5mm
Beam Divergence Angle: Near 10 mrad
Operating Temperature: 0°C~45°C
Storage Temperature: -40°C~85°C