QL85R6SX QSI 850nm 200mW IR Laser Diode TO-18 Φ5.6mm

QL85R6SX QSI 850nm 200mW IR Laser Diode TO-18 Φ5.6mm

The QL85R6S-A/B/C from Quantum Semiconductor International is a laser diode with a wavelength of 850nm and an output power of 200mW. It has an operating voltage of 1.8~2.6V and an operating current of 180~240mA. The QL85R6S-A/B/C is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure.

[Features]
1. Wavelength: 850nm(typ.)
2. Optical Power Output: 200mW CW
3. Package Type: TO-18 (5.6mm)
4. Built-in Photo Diode for Monitoring Laser Diode

[Applications]
1. Motion Recognition Sensor
2. Industrial Optical Module